Datasheet > XN01457|XN1457

XN01457|XN1457

更新时间： 2024-09-29 23:33:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	86K
描述
Composite Device - Composite Transistors

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中文翻译

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数据手册

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XN01457|XN1457 数据手册

Composite Transistors

XN01457

Silicon PNP epitaxial planar type

Unit: mm

+0.20

–0.05

1.9 ^0.1

(0.95) (0.95)

2.90

+0.10

0.16

–0.06

For general amplification

■ Features

• Two elements incorporated into one package

(Emitter-coupled transistors)

• Reduction of the mounting area and assembly cost by one half

+0.10

–0.05

0.30

10˚

■ Basic Part Number

• 2SB1693 × 2

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

−40

Unit

1: Collector (Tr1)

2: Collector (Tr2)

3: Base (Tr2)

4: Emitter

5: Base (Tr1)

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−20

EIAJ: SC-74A

Mini5-G1 Package

−15

Marking Symbol: 4Y

Collector current

I_C

I_CP

P_T

− 0.5

−1

Peak collector current

Total power dissipation

Junction temperature

Storage temperature

Internal Connection

300

°C

Tr2

T_j

150

T_stg

−55 to +150

Tr1

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

h_FE1

Conditions

Min

−40

−20

−15

160

100

0.50

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

I_E= −10 µA, I_C= 0

Forward current transfer ratio ^*

V_CE= −2 V, I_C= −100 mA

V_CE= −2 V, I_C= −500 mA

560



h_FE2

1, 2

h_FEratio ^*

h_FE(SmallV_CE= −2 V, I_C= −100 mA

/Large)

0.99



Collector-emitter saturation voltage ^*

V_CE(sat)I_C= −100 mA, I_B= −10 mA

−60

−300

I_C= − 0.5 A, I_B= −25 mA

−210 −500

Transition frequency

f_T

V_CB= −5 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

170

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Ratio between 2 elements

Publication date: December 2003

SJJ00260BED

12 3

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